symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 15 18 45 55 r jc 1 1.5 maximum junction-to-case b steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s c/w maximum junction-to-ambient a w t a =70c 1.5 junction and storage temperature range -55 to 175 c power dissipation a t a =25c p dsm 2.3 avalanche current c 20 a repetitive avalanche energy l=0.1mh c 20 mj a t c =100c 28 pulsed drain current c 80 continuous drain current t c =25c i d 40 drain-source voltage 105 v gate-source voltage 25 v absolute maximum ratings t a =25c unless otherwise noted parameter maximum units steady-state r ja c/w power dissipation b t c =25c p d 100 w t c =100c 50 aod464 n-channel enhancement mode field effect transistor features v ds (v) = 105v i d = 40 a (v gs =10v) r ds(on) < 28 m ? (v gs =10v) @ 20a r ds(on) < 31 m ? (v gs = 6v) 100% uis tested! 100% rg tested! general description the aod464 uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. this device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. -rohs compliant -halogen free* g d s g t o-252 d-pak t op view s bottom view d g s alpha & omega semiconductor, ltd. www.aosmd.com
aod464 symbol min typ max units bv dss 105 v 1 t j =55c 5 i gss 100 na v gs(th) 2.5 3.2 4 v i d(on) 80 a 21.5 28 t j =125c 32 40 24 31 m ? ? q g (10v) 38.5 46 nc q gs 8nc q gd 10 nc t d(on) 12.7 ns t r 8.2 ns t d(off) 31.5 ns t f 11.2 ns t rr 59.6 74 ns q rr 161 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. rev0: july2005 body diode reverse recovery time i f =20a, di/dt=100a/ s body diode reverse recovery charge i f =20a, di/dt=100a/ s turn-on delaytime v gs =10v, v ds =50v, r l =2.7 ? , r gen =3 ? turn-on rise time turn-off delaytime turn-off fall time gate resistance v gs =0v, v ds =0v, f=1mhz switching parameters total gate charge v gs =10v, v ds =50v, i d =20a gate source charge gate drain charge maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =25v, f=1mhz output capacitance reverse transfer capacitance forward transconductance v ds =5v, i d =20a diode forward voltage i s =1a, v gs =0v r ds(on) static drain-source on-resistance v gs =10v, i d =20a m ? v gs =6v, i d =20a gate threshold voltage v ds =v gs , i d =250 a on state drain current v gs =10v, v ds =5v a gate-body leakage current v ds =0v, v gs =25v drain-source breakdown voltage i d =10ma, v gs =0v i dss zero gate voltage drain current v ds =84v, v gs =0v electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design, and the maximum temperature of 175c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c: repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =175c. g. the maximum current rating is limited by bond-wires. h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. *this device is guaranteed green after data code 8x11 (sep 1 st 2008). rev1: sep. 2008 alpha & omega semiconductor, ltd. www.aosmd.com
aod464 typical electrical and thermal characteristics 0 5 10 15 20 25 2 2.5 3 3.5 4 4.5 5 v gs (volts) figure 2: transfer characteristics i d (a) 10 20 30 40 0 10203040 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =6v,20a v gs =10v, 20a 20 30 40 50 60 4 8 12 16 20 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =6v v gs =10v i d =20a 25c 125c 0 20 40 60 80 100 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =4.5v 6v 10v 5v alpha & omega semiconductor, ltd. www.aosmd.com
aod464 typical electrical and thermal characteristics 0 2 4 6 8 10 0 10203040 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 1 2 3 0 20406080100 v ds (volts) figure 8: capacitance characteristics capacitance (nf) c iss 0 100 200 300 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c rss v ds =50v i d =20a single pulse d=t on /t t j,pk =t a +p dm .z jc .r jc r jc =1.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t c =25c 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 s 100 s 1ms, dc dc r ds(on) limited t j(max) =175c, t a =25c alpha & omega semiconductor, ltd. www.aosmd.com
aod464 typical electrical and thermal characteristics 0 50 100 150 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) 0 10 20 30 40 50 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) 0 20 40 60 0.000001 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current dd d a v bv i l t ? ? = t a =25c t a =150c 0 20 40 60 80 100 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) 0.001 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =55c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t a =25c alpha & omega semiconductor, ltd. www.aosmd.com
aod464 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f di/dt i rm rr vdd vdd q = - idt t rr - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms tt r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms vds ar dss 2 e = 1/2 li ar ar alpha & omega semiconductor, ltd. www.aosmd.com
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